In March 2019 Samsung Electronics announced that it has started to mass produce its first embedded MRAM, made using the company’s 28nm FD-SOI process. The company now announced that it managed to improve the MTJ function of its MRAM, which makes it suitable for more applications.
Samsung will now expand the application of its eMRAM solutions to more markets – specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets.
Samsung’s latest MRAM die is 40% smaller than SRAM. The company’s MRAM boasts 30-50 ns read and write speeds, and the company aims to enhance the read and write speeds to be under 20ns.
Samsung details that its eMRAM is 1,000 times faster than its eFlash memory, and it does not require an erase cycle before writing data (unlike Flash memory). The voltage used is also lower – and in total eMRAM consumes 1/400 the energy compared to eFlash for the writing process. Samsung’s MRAM capacity, though, is lower than its 3D Xpoint, DRAM and NAND flash.