Researchers say MnPd3 will enable a breakthrough in SOT-MRAM memory devices

(MRAM-Info, May 16, 2023) Researchers say MnPd3 will enable a breakthrough in SOT-MRAM memory devices. Researchers from the School of Engineering at Stanford University discovered that a metallic compound called manganese palladium three MnPd3 is a promising material to build SOT-MRAM memory devices.