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Renesas annouces breakthrough circuit tech for embedded STT-MRAM MCUs...

(EEHerald, Feb. 22) The successful fabrication of a prototype MCU test chip featuring a 10.8Mbit MRAM memory cell array using a 22 nm embedded MRAM process gives Renesas ability to push the boundaries of memory access speed and efficiency. These breakthrough technologies not only enable higher-performance MCUs with embedded MRAM but also pave the way for faster and more reliable data processing in IoT and AI-driven applications. See link for details.


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