(June 27, www.itri.org) ITRI announced its collaborations with TSMC and National Yang Ming Chiao Tung University on the development of magnetic memory technology. ITRI has announced its collaborations with industry and academic partners on making advancements in magnetic memory technology. It has worked with semiconductor manufacturing leader TSMC in the development of Spin Orbit Torque Magnetoresistive Random Access Memory (SOT-MRAM) array chips. Meanwhile, it joined hands with National Yang Ming Chiao Tung University (NYCU) to develop magnetic memory technology that can perform across a wide operating temperature range of nearly 400°C. Both developments are pivotal for industries to move towards next-generation memory technology.