After years in the lab, SOT-MRAM might finally be ready for the real world....
- Oct 17, 2025
- 1 min read
A tungsten breakthrough could finally make next-gen memory a reality
(TECHSPOT, Oct 14) researchers in Taiwan and the United States have solved a materials stability problem that has kept spin-orbit torque magnetic random-access memory (SOT-MRAM) from moving beyond the lab and into commercial production. The breakthrough centers on stabilizing the β-phase of tungsten (β-W), a highly conductive material essential for generating the spin currents required in SOT-MRAM devices, even when exposed to the high temperatures of semiconductor manufacturing (See link for details).
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