TSMC and UT Austin Demonstrate 2-Nanosecond Magnetic Memory, but Edge AI Accuracy Remains a Hurdle.....

(XenoSpectrum, Aug. 30) A research team led by Associate Professor Jean Anne Incorvia of the Microelectronics Research Center in the Department of Electrical and Computer Engineering at the University of Texas at Austin, together with Samuel Liu, a recent PhD graduate from her lab, conducted joint research with the Corporate Research division of TSMC, the world's largest semiconductor foundry. The team fabricated an array of spin-orbit torque magnetic random access memory (SOT-MRAM) on a standard 300-millimeter wafer used in mass semiconductor production, and carried out detailed physical characterization of the devices (See link for details).

https://xenospectrum.com/en/sot-mram-wafer-scale-edge-ai-benchmark/#google_vignette