(SciTechDaily, Jan. 14) In recent years, new types of memory for computing devices have been developed to address the limitations of traditional random access memory (RAM). Magnetoresistive RAM (MRAM) stands out among these innovations, offering key benefits such as non-volatility, high speed, larger storage capacity, and greater durability. However, one major challenge remains: reducing energy consumption during data writing (See link for full article).

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