Researchers from TSMC, ITRI, Stanford and YMCT developed a 64-kilobit SOT-MRAM based on back-end-of-line-compatible β-tungsten..

(MRAM-Info, Sept. 9) Researchers from TSMC, Sandford University, ITRI and National Yang Ming Chiao Tung University have fabricate a 64-kb SOT-MRAM based β-phase Tungsten that offers a spin–orbit torque switching of 1 ns, data retention of more than 10 years and a tunnelling magnetoresistance of 146% (See link for details).

https://www.mram-info.com/researchers-tsmc-itri-stanford-and-ymct-developed-64-kilobit-sot-mram-based-back-end-line

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