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Researchers develop the most advanced MRAM free layer to date..

  • Writer: Daniel Montag
    Daniel Montag
  • 11 minutes ago
  • 1 min read

(MRAM-info, Dec. 12) Researchers from the Institute of Science Tokyo (formerly Tokyo Tech), in collaboration with Western Digital, developed a new MRAM free layer with a giant perpendicular magnetic anisotropy, with the potential scaling to CMOS 5 nm process. This is said to be the most advanced MRAM free layer to date (See link for article).

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