MRAM, a major breakthrough by TSMC....

(Nature Electronics, Oct. 20) A multinational research team from institutions including National Yang Ming Chiao Tung University in Taiwan, TSMC, and the Industrial Technology Research Institute have made a major breakthrough in MRAM technology. They successfully developed a spin - orbit torque magnetoresistive random - access memory (SOT - MRAM) based on β - phase tungsten material, achieving remarkable performance indicators: it only takes 1 nanosecond to complete data switching, the data retention time exceeds 10 years, and the tunneling magnetoresistance ratio is as high as 146% (See link for details).

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