Process​

• Active deposition

• Anneal

• Ash

• Atomic layer deposition (ALD)

• Back-etch

• Broad Ion beam deposition

• Co-sputtering

• CMP

• Contamination

• Cross contamination

• DC Magnetron

• Defect

• Delamination

• Deposition

• Deposition rate

• De-scum

• Dielectric deposition

• Dielectric etch

• Diffusion

• Donors

• Dopping

• Dry etch

• Etch

• Etch Rate

• Etch Profile

• Ecthant

• Edge effect

• Edge exclusion

• End point detection

• Epitaxy

• Evaporation

• Exclusion zone

• Flux

• Flux density

• Furnace

• High field magnetic anneal 

• Homogeneity

• Implantation

• Impurities

• Ion beam etch 

• Inductively coupled plasma (ICP)

• Incidence angle

• Initialize

• Interface

• Interfacial effects

• In-situ film thickness monitoring

• Ion assisted depostion

• Ion current

• Ion incidence angle

• Ion Milling

• Ion Source

• ionization

• Isotropic etch

• Isotropy

• Lift-off

• Magnetic anneal

• Magnetize

• Magnetic saturation

• Magnetic Vacuum Annealing

• Magnetron

• Masking

• Matching network

• Metal deposition

• Metal etch

• Metalization

• Milling

• Molecular Beam Epitaxy (MBE)

• Monolayer

• Non-uniformity

• Oxidation

• Paterning

• Particles

• Passive deposition

• Passivation

• Photolithography

• Physical vapor deposition (PVD)

• Physically Enhanced Chemical Vapor Depostion

• Pin-hole

• Plasma

• Plasma density

• Plasma etch

• Plasma process

• Plasma Source

• Polysilicon etch

• Process drift

• Process of record (POR)

• Pulsed Laser Deposition

• Race track

• Rapid thermal anneal

• Reactive Ion Beam Etch

• Reactive Ion Etch

• Repeatability 

• RF Magnetron

• Rotation

• Rotating magnet array

• Scrap

• Secondary Ion Mass spectroscopy

• Selectivity

• Shadowing

• Skew Angle 

• Skew angle range

• Soft etch

• Sputtering

• Sputter etch rate (thermal oxide)

• Sputter Threshold

• Static Depostion

• Strip

• Substrate heating/cooling

• Target

• Target thickness

• Target poisoning

• Thermal oxidation

• Thickness WIW

• Thickness WTW non-uniformity (full target life)

• Tilt

• Unifomity

• Vacuum

• Wafer cooling/heating

• Wafer to wafer untifomity

• Wafer-to-Wafer Repeatability

• Wet etch

• Within Wafer uniformity

• Backing pate

• Rotating magnet array

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