Memory

The following is a partial list of common search terms...........

Memory

  • 3D X-point

  • AMR

  • Angular momentum

  • Anti-ferromagnetic exchange 

  • Anti-ferromagnetism

  • Anisotropic Magnetoresistance

  • Anisotropy

  • Bias voltage

  • Bit

  • Bit line

  • Breakdown voltage

  • Capacitor

  • CBRAM

  • Coercivity

  • Conduction

  • Curie temperature

  • Current

  • Current density

  • Damping

  • Damping-factor

  • Data

  • Data retention

  • Density 

  • Domain wall

  • Dislocation 

  • Dynamic random access memory (DRAM)

  • Embedded memory

  • Endurance

  • Error rate

  • Exchange coupling

  • FeRAM

  • Ferromagnetic

  • Ferromagnetism

  • Free Layer

  • Gate voltage

  • Giant Magnetoresistance (GMR)

  • Hall effect

  • Head

  • Heusler alloys

  • In-plane MRAM

  • Interface

  • Magnetoresistance

  • Mageto-resistive RAM

  • Magnetic moment

  • Magnetic Tunnel Junction

  • Magnon

  • Magnonics

  • Memory

  • Magnetic random access memory (MRAM)

  • Nano-pillars

  • Non-volatile memory (NVM)

  • OST-RAM

  • PCM

  • PCRAM

  • Permalloy

  • Perpendicular magnetic anisotrory

  • Perpendicular MRAM

  • Phase change memory (PCM)

  • Pinned Layer

  • Polarity

  • Polarizer

  • Polychrystalline

  • PRAM

  • Race track

  • Random Access Memory (RAM)

  • Read element

  • Reader

  • Reference layer

  • Reliability

  • Remanence

  • ReRAM

  • Resistance

  • Resistance drift 

  • Resistivity

  • Saturation 

  • Skyrmion

  • Soft layer (same as free layer)

  • SOT-RAM

  • Spin-orbit 

  • Spin hall 

  • Spin hall effect

  • Spin-orbit coupling

  • Spin-polarization

  • Spin-torque

  • Spin Transfer

  • Spin Valve

  • Stand alone memory

  • Static random access memory (SRAM)

  • Storage element

  • Stray field

  • Switching

  • Switching speed

  • Tape

  • TAS-RAM

  • Thermal gradient

  • Thermal stability 

  • Threshold voltage

  • TMR ratio

  • Toggle-RAM

  • Tunnel barrier

  • Tunneling

  • Tunnel-magnetoresistance (TMR)

  • Voltage

  • Voltage induced

  • Write element

  • Word line

  • Write line/path

  • Writing

  • Writability

  • Writer

  • Hall effect

  • CMOX

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North Amiercan Nanotech, Inc.                                           Contact Us:

12701 Welcome Lane                                                               P. 612-819-5149

Burnsville, MN 55337                                                              E. northamericananotech@icloud.com

www.northamericananotech.com                                      Skype. dmmontag612