Memory

• 3D X-point

• AMR

• Angular momentum

• Anti-ferromagnetic exchange 

• Anti-ferromagnetism

• Anisotropic Magnetoresistance

• Anisotropy

• Bias voltage

• Bit

• Bit line

• Breakdown voltage

• Capacitor

• CBRAM

• Coercivity

• Conduction

• Curie temperature

• Current

• Current density

• Damping

• Damping-factor

• Data

• Data retention

• Density 

• Domain wall

• Dislocation 

• Dynamic random access memory (DRAM)

• Embedded memory

• Endurance

• Error rate

• Exchange coupling

• FeRAM

• Ferromagnetic

• Ferromagnetism

• Free Layer

• Gate voltage

• Giant Magnetoresistance (GMR)

• Hall effect

• Head

• Heusler alloys

• In-plane MRAM

• Interface

• Magnetoresistance

• Mageto-resistive RAM

• Magnetic moment

• Magnetic Tunnel Junction

• Magnon

• Magnonics

• Memory

• Magnetic random access memory (MRAM)

• Nano-pillars

• Non-volatile memory (NVM)

• OST-RAM

• PCM

• PCRAM

• Permalloy

• Perpendicular magnetic anisotrory

• Perpendicular MRAM

• Phase change memory (PCM)

• Pinned Layer

• Polarity

• Polarizer

• Polychrystalline

• PRAM

• Race track

• Random Access Memory (RAM)

• Read element

• Reader

• Reference layer

• Reliability

• Remanence

• ReRAM

• Resistance

• Resistance drift 

• Resistivity

• Saturation 

• Skyrmion

• Soft layer (same as free layer)

• SOT-RAM

• Spin-orbit 

• Spin hall 

• Spin hall effect

• Spin-orbit coupling

• Spin-polarization

• Spin-torque

• Spin Transfer

• Spin Valve

• Stand alone memory

• Static random access memory (SRAM)

• Storage element

• Stray field

• Switching

• Switching speed

• Tape

• TAS-RAM

• Thermal gradient

• Thermal stability 

• Threshold voltage

• TMR ratio

• Toggle-RAM

• Tunnel barrier

• Tunneling

• Tunnel-magnetoresistance (TMR)

• Voltage

• Voltage induced

• Write element

• Word line

• Write line/path

• Writing

• Writability

• Writer

• Hall effect

• CMOX